OVERVIEW
Ion Implantation Gases are specialty semiconductor process gases used as dopant sources during ion implantation. Based on our current semiconductor materials portfolio, Synergi can support selected implantation gas requirements including arsine, phosphine, boron trifluoride and boron trifluoride / hydrogen mixtures.
CORE PRODUCTS
Arsine
Specialty dopant gas used in semiconductor ion implantation processes requiring arsenic implantation.
Phosphine
Specialty dopant gas used in phosphorus ion implantation and selected semiconductor process applications.
Boron Trifluoride
Boron-containing specialty gas used as a dopant source in semiconductor ion implantation.
Boron Trifluoride / Hydrogen
Specialty gas mixture for selected boron implantation requirements and process-specific semiconductor applications.
APPLICATIONS
PRODUCT RANGE
| Product | Formula | Primary Use | Portfolio Status |
|---|---|---|---|
| Arsine | AsH₃ | Ion implantation | Available through selected supply partners |
| Phosphine | PH₃ | Ion implantation | Available through selected supply partners |
| Boron Trifluoride | BF₃ | Ion implantation | Available through selected supply partners |
| Boron Trifluoride / Hydrogen | BF₃/H₂ | Ion implantation | Available through selected supply partners |
The current source material identifies these products and their semiconductor application category, but does not provide purity, cylinder size, concentration or detailed commercial specifications. These should be confirmed from the current supplier TDS / COA before publication.
